Narrow Band Gap Semiconductors and Devices (II-VI and III-V: mainly HgCdTe, HgTe, InSb)

 
  1. Y. Nemirovsky and G. Bahir, Passivation of HgCdTe Surfaces, J. Vac. Sci., Vol. A7, No. 2, pp. 450-459, 1989.
  2. Y. Nemirovsky, Passivation with II-VI Compounds,J. Vac. Sci. Technol., Vol. A(8), pp. 1185-1187, 1990.
  3. E. Finkman and Y. Nemirovsky, Infrared Optical Absorption of Hg1-xCdxTe, J. Appl. Physics, Vol. 50, pp. 4536-4561, 1979..
  4. Y. Nemirovsky and E. Finkman, Anodic Oxide Films on Hg1-xCdxTe, J. Electrochem. Soc., Vol. 126, pp. 768-770, 1979.
  5. Y. Nemirovsky and I. Kidron, The Interface Between Hg1-xCdx and its Native Oxide, Solid State Electronics, Vol. 22, pp. 831-837, 1979.
  6. Y. Nemirovsky and E. Finkman, Intrinsic Carrier-Concentration of Hg1-xCdxTe, J. Appl. Physics, Vol. 50, pp. 8107-8111, 1979.
  7. S. Margalit, Y. Nemirovsky and I. Rotstein, Electrical Properties of Ion Implanted Layers in Hg0-79Cd0-21Te, J. Appl. Physics, Vol. 50, pp. 6386-6389, 1979.
  8. S. Margalit and Y. Nemirovsky, Diffusion of Indium in Hg1-xCdxTe, J. Electrochem. Soc., pp. 1530-1534, 1980.
  9. Y. Nemirovsky, S. Margalit and I. Kidron, N-Channel Insulated-Gate Field-Effect Transistors in Hg1-xCdxTe with x=0.215, Appl. Phys. Letters, Vol. 36, pp. 466-468, 1980.
  10. Y. Nemirovsky and R. Goshen, Plasma Anodization of Hg1-xCdxTe, Appl. Phys. Lett., Vol. 37, No. 9, pp. 813-815, 1980.
  11. E. Finkman and Y. Nemirovsky, Two-Electron Conduction in Hg1-xCdxTe, J. Appl. Phys., Vol. 53, No. 2, pp. 1052-1058, 1982.
  12. Y. Nemirovsky, S. Margalit, E. Finkman, J. Shacham-Diamand and I. Kidron, Growth and Properties of Hg1-xCdxTe Epitaxial Layers, J. of Electronic Materials, Vol. 11, pp. 133-153, 1982.
  13. Y. Nemirovsky, R. Goshen and I. Kidron, The Interface of Plasma Anodized Hg1-xCdxTe, J. Appl. Phys., Vol. 53, No. 7, pp. 4888-4895, 1982.
  14. G. Bahir, R. Kalish and Y. Nemirovsky, Electrical Properties of Donor and Acceptor Implanted Layers in Hg1-xCdxTe Following CW CO2 Laser Annealing, Appl. Phys. Lett., Vol. 41, No. 11, pp. 1057-1059, 1982.
  15. Y. Nemirovsky and L. Burstein, Anodic Sulfide Films on HgCdTe, Appl. Phys. Lett., Vol. 44, pp. 443-444, 1984.
  16. Y. Nemirovsky and A. Kepten, Open-Tube Vapor Transport Epitaxy of Hg1-xCdxTe, J. of Electronic Materials, Vol. 13, pp. 1-29, 1984.
  17. Y. Nemirovsky, L. Burstein and I. Kidron, The Interface of p-Hg1-xCdxTe Passivated with Native Sulfides, J. Appl. Phys., Vol. 58, pp. 366-373, June 1985.
  18. E. Sand, D. Levy and Y. Nemirovsky, A Combination of Vapor Phase and Liquid Phase Epitaxy of Hg1-xCdxTe, Appl. Phys. Lett., Vol. 46, No. 5, pp. 501-503, 1985.
  19. E. Sand and Y. Nemirovsky, Calibration Curve for Cut Off Wavelength of Photodiodes in Hg1-xCdxTe Epilayers, Infrared Physics, Vol. 25, pp. 591-594, 1985.
  20. E. Finkman and Y. Nemirovsky, Electrical Properties of Shallow Levels in p-Type HgCdTe, J. Appl. Phys., Vol. 59, pp. 1205-1212, 1986.
  21. Y. Nemirovsky, R. Adar, A. Kornfeld and I. Kidron, Gate-Controlled Hg1-xCdxTe Photodiodes Passivated with Native Sulfides, J. Vacuum Sci. and Technology, Vol A4, No. 4, pp. 1986-1991, 1986.
  22. Y. Nemirovsky and I. Bloom, Tunneling Currents in Reverse Biased HgCdTe Photodiodes,Infrared Physics, Vol. 27, pp. 143-151, 1987.
  23. R. Adar, Y. Nemirovsky and I. Kidron, Bulk Tunneling Contribution to the Reverse Breakdown Characteristics of InSb Gate Controlled Diodes,
    Solid State Electronics, Vol. 30, pp. 1289-1293, 1987.
  24. I. Bloom and Y. Nemirovsky, Bulk Levels and Interface Calculations for Narrow Band-Gap Semiconductors, Solid State Electronics, Vol. 31, pp. 17-25, 1988.
  25. Y. Nemirovsky and D. Rosenfeld,
    The Cut-Off Wavelength and Minority-Carrier Life-Time in Implanted n+-on-Bulk p HgCdTe Photodiodes, J. Appl. Phys., Vol. 63, pp. 2435-2439, 1988.
  26. Y. Nemirovsky and I. Bloom, Admittance Measurements in p-type HgCdTe, J. Vac. Sci., Vol. A(4), pp. 2710-2715, 1988.
  27. D. Lubzens, D. Rosenfeld and Y. Nemirovsky, The NETD Performance of HgCdTe Photodiode Array, Infrared Physics, Vol. 28, pp. 417-423, 1988.
  28. R. Adar, I. Bloom and Y. Nemirovsky, Slow Trapping Measurements in the InSb-Anodic Oxide Interface, Solid State Electronics, Vol. 32, pp. 111-118, 1989.
  29. Y. Nemirovsky, D. Rosenfeld, R. Adar and A. Kornfeld, Tunneling and Dark Currents in HgCdTe Photodiodes, J. Vac. Sci., Vol. A7(2), pp. 528-535, 1989.
  30. Y. Hait and Y. Nemirovsky, Comparison of NETD Performance of Staring and Partial-Scanning Infrared Focal Plane Arrays, Infrared Physics, Vol. 29, pp. 971-984, 1989.
  31. R. Fastow and Y. Nemirovsky, Excess Carrier Life-Time and Undoped p-Type HgCdTe by Photoconductive Decay, J. Appl. Phys., Vol. 66, pp. 1705-1710, 1989.
  32. R. Fastow and Y. Nemirovsky, The Transient and Steady-State Excess Carrier Lifetime in p-Type HgCdTe, Appl. Phys. Lett., Vol. 55, pp. 1882-1884, 1989.
  33. Y. Hait and Y. Nemirovsky, A Modified and Systematic Approach to NETD Calculation for Infra Red Focal Plane Arrays, Infrared Physics, Vol. 30, pp. 71-83, 1990.
  34. R. Adar, I. Bloom and Y. Nemirovsky, Combined Technique for Capacitance and Slow Trapping Characterization, Solid State Electronics, Vol. 33, pp. 1197-1206, 1990.
  35. R. Fastow and Y. Nemirovsky, The Excess Carrier Lifetime in p-type HgCdTe, Vac. Sci. Technol., Vol. A, No. 8, pp. 1245-1250, 1990.
  36. Y. Nemirovsky and D. Rosenfeld, Passivation and 1/f Noise Phenomena in HgCdTe Photodiodes, J. Vac. Sci. Technol., Vol. A(8), pp. 1159-1166, 1990.
  37. N. Amir, D. Fekete and Y. Nemirovsky, A Model for the Determination of the Solid Composition of Ternary III-V and II-VI MOCVD Epilayers, J. Appl. Phys., Vol. 68, pp. 871-873, 1990.
  38. R. Fastow, D. Goren and Y. Nemirovsky, Shockley-Read Recombination and Trapping in p-type HgCdTe, J. Appl. Phys., Vol. 68, pp. 3405-3412, 1990.
  39. N. Amir, D. Goren, D. Fekete and Y. Nemirovsky, A Model for High Temperature Growth of CdTe by MOCVD, J. Electron Materials, Vol. 20, pp. 227-230, 1990
  40. I. Bloom and Y. Nemirovsky, Quantum Efficiency and Crosstalk of an Improved Backside Illuminated Indium Antimonide Focal Plane Array, IEEE Trans. on Electron Devices, Vol. 38, pp. 1792-1796, 1991.
  41. Y. Nemirovsky, R. Fastow, M. Meyassed and A. Unikovsky, Trapping Effects in HgCdTe, J. Vac. Sci. Technol., Vol. B(9), pp. 1829-1839, 1991.
  42. Y. Nemirovsky, D. Goren and A. Ruzin, A Model for Low Temperature Growth of CdTe by MOCVD, J. of Electronic Materials, Vol. 20, pp. 609-613, 1991
  43. M. Meyassed and Y. Nemirovsky, The Measurement and Modeling of HgCdTe Metal-Insulator-Semiconductor Devices, Appl. Phys. Lett., Vol. 59, pp. 2439-2441, 1991.
  44. I. Bloom and Y. Nemirovsky, Lifetime Determination of Etch-Thinned InSb Wafers, IEEE Trans. of Electron Devices, Vol. 39, pp. 809-812, 1992.
  45. D. Goren, N. Amir and Y. Nemirovsky, Determination of the Interface Charge between an Epilayer and a Substrate using Capacitance Voltage Measurements, J. Appl. Phys., Vol. 71, pp. 318-325, 1992.
  46. Y. Nemirovsky and A. Unikovsky, Tunneling and 1/f Noise in HgCdTe Photodiodes, J. Vac. Sci. & Technology, Vol. B10(4), pp. 1602-1610, (1992).
  47. A. Unikovsky and Y. Nemirovsky, Trap Assisted Tunneling in HgCdTe Photodiodes", Appl. Phys. Lett., Vol. 61, pp. 330332, (1992).
  48. I. Bloom and Y. Nemirovsky, Surface Passivation of Backside Illuminated Indium Antimonide Focal Plane Array, IEEE Trans. on Electron Devices, 40, pp. 309-314, (1993).
  49. A. Ruzin and Y. Nemirovsky, Photon Assisted Metal Organic Chemical Vapor Deposition of HgTe, J. Electronic Materials, 22(3), pp. 281-288, (1993).
  50. L. Goldmintz, B. Sabbah, Z. Friedman and Y. Nemirovsky, Tunneling and 1/f Noise in HgCdTe Photodiodes, Optical Engineering, 32(5), pp. 952-957, (1993).
  51. An Analytical Approximation for the Free Electron Density of Hg1-xCdxTe Alloy System for, Tunneling and 1/f Noise in HgCdTe Photodiodes,
    J. Appl. Phys., 78(9), pp. 5845-5847, (1995).
  52. Y. Nemirovsky, Passivation of Cd/Zn/Te/Se Compounds, Properties of Narrow Gap Cadmium-Based Compounds, P. Capper editor, pp. 573-574, IEE (EMIS), England (1994).
  53. Y. Nemirovsky, N. Mainzer and E. Weiss, Passivation of HgCdTe, Properties of Narrow Gap Cadmium-Based Compounds, P. Capper editor, pp. 284-290, IEE (EMIS), England (1994).
  54. Y. Nemirovsky and R. Fastow, Lifetime in p-type HgCdTe, ibid, pp. 233-238, (1994).
  55. Y. Nemirovsky and N. Amir, Tunneling and 1/f Noise in HgCdTe Photodiodes, in Narrow-Gap II-VI Compounds for Opto-Electronic and Electro-Magnetic Applications, Ed. P. Capper, Electronic Material Series, Series Editors A.F.W. Willoughby and R. Hull, Chapman & Hall, London, forthcoming, pp. 291-326, (1996).
  56. D. Goren, L. Dejaloshinsky and Y. Nemirovsky, HgTe Contacts on CdTe, 13th Israeli Vacuum Society Conference, May 4, Tel Aviv University, 1993.
  57. Y. Nemirovsky and N. Amir, MOCVD CdTe Passivation of HgCdTe, U.S. Workshop on the Physics and Chemistry of MCT, Oct. 1993, Seattle, U.S.A.
  58. Y. Nemirovsky, N. Amir, D. Goren and G. Asa, The Interface of MOCVD-CdTe/HgCdTe, US Workshop on the Physics and Chemistry of MCT, October 1994, Texas, U.S.A.
  59. N. Amir and Y. Nemirovsky, MOCVD Heterostructure Growth of CdTe (Epilayer) / HgCdTe (Substrate), The 7th Israel Materials Engineering Conference Proceedings, 27-29 November, 1994.
  60. R. Adar, I. Bloom, Y. Nemirovsky and I. Kidron, Trapping Effects and Interface Characterization of Narrow Bandgap Semiconductors Using Improved Q-C Method, The 15th Conference of Electrical and Electronics Engineers, April 1987, Tel-Aviv.
  61. Y. Nemirovsky and I. Bloom, Admittance Measurements in p-type HgCdTe, The U.S. Workshop on the Physics and Chemistry of MCT, Oct. 1987, New Orleans.
  62. R. Adar, D. Rosenfeld and Y. Nemirovsky, Trapping Effects and Interface Characterization of Narrow Bandgap Semiconductors Using Improved Q-C Method, The 6th Meeting of Optical Engineering in Israel, December 1988, Tel-Aviv, Israel.
  63. Y. Nemirovsky, D. Rosenfeld, R. Adar and A. Kornfeld, Tunneling and Dark Currents in HgCdTe Photodiodes, The U.S. Workshop on the Physics and Chemistry of MCT, Oct. 1988, Orlando.
  64. D. Rosenfeld and Y. Nemirovsky, Noise Phenomena in HgCdTe Photodiodes, presented at the 16th Convention of Electrical and Electronics Engineers in Israel, March 1989, Tel-Aviv, Israel.
  65. R. Fastow and Y. Nemirovsky, The Excess Carrier Lifetime of p-type HgCdTe, The U.S. Workshop on the Physics and Chemistry of MCT, Oct. 1989, San Diego.
  66. Y. Nemirovsky and D. Rosenfeld, Passivation and 1/f Noise Phenomena in HgCdTe Photodiodes, The U.S. Workshop on the Physics and Chemistry of MCT, Oct. 1989, San Diego.
  67. Y. Nemirovsky, Passivation with II-VI Compounds, The U.S. Workshop on the Physics and Chemistry of MCT, Oct. 1989, San Diego.
  68. Y. Nemirovsky, Trapping Effects in HgCdTe, The U.S. Workshop on the Physics and Chemistry of MCT, Oct. 1990, San Francisco.
  69. I. Bloom and Y. Nemirovsky, Design and Fabrication of Indium Antimonide Focal Plane Array, SPIE, November 1990, Tel-Aviv, Israel.
  70. Y. Nemirovsky and A. Unikovsky, Tunneling and 1/f Noise in HgCdTe Photodiodes, The U.S. Workshop on the Physics and Chemistry of MCT, Oct. 1991, Dallas.